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Department of Earth & Space Science
Space Science Center, Room 101
235 Martindale Drive
Morehead, KY 40351
Phone: 606-783-2381
Fax: 606-783-5040

MSU Home :: Xu, Qingzhou
Qingzhou Xu
Dr. Qingzhou Xu

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Xu, Qingzhou, Micro-Fabrication Engineer / Instructor of Space Science
Program/Dept: Earth and Space Science
Degrees, Licensures and Certifications: PhD., Materials Science and Engineering, University of California, Irvine, CA; M.S., Materials Science and Engineering, Bejing Univeristy of Science and Technology, China; B.S., Materials Science and Engineering, Harbin Institute of Technology, China.
Contact Info:
Space Science Center 212F
Phone: 606.783.9598


Dr. Xu received the B.S. degree in materials science and engineering from Harbin Institute of Technology, China, in 1989, the M.S. degree in materials science and engineering from Beijing University of Science and Technology, China, in 1992, and the Ph.D. degree in materials science and engineering from University of California, Irvine, USA, in 2000. He has worked as an engineer in the Chinese Academy of Science Mechanics Institute, Beijing, China; the Chinese National Engineering Center of Composites, Beijing, China; and the RF Integrated Corporation, California, USA. His early study and work experience includes structural materials (light alloys and refractory metals), engineering functional materials (hard/soft magnetic materials, hydrogen-storage materials for rechargeable battery and non-lead soldering materials) and thin films. His recent study and work experience are mainly on semiconductor materials and processing, III-V compound device passivation, high-speed transistors (HBTs and HEMTs) processing and characterization, micro-electro-mechanical systems (MEMS) magnetostatic actuators and electrostatic switches, nanolithography and nano-devices. The current interests focus on using materials science knowledge to solve the reliability issues in the areas of RF MEMS switches (thin-film stress control, reliable switch contacts and novel switch architecture with enhanced reliability) and III-V compound transistors (high-performance ohmic contacts and device passivation) as well as developing novel nano-layered and nanostructured materials. He has first authored over 20 journal and conference papers.

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